![]() However, life test at 573 K for over 800 h has not been reported. We have also recently reported that a GaN n-p-n bipolar junction transistor can be operated at high temperature. They obtained a high current gain and high-temperature operation at 533 K. Pankov fabricated a hetero-bipolar junction transistor using n-type GaN and p-type SiC, since p-type GaN with a high carrier concentration was very difficult to grow. However, until now, no life test of the FET by continuous current-injection at 673 K for over 1010 h has been reported.įurthermore, there have been few reports concerning the bipolar junction transistor. We have recently investigated the GaN MESFET using gas-source molecular beam epitaxy (GSMBE). Regarding high-temperature operation devices, there have only been a few reports concerning transistors that can operate at temperatures of 673 K, and the reliability of the GaN metal semiconductor field effect transistor (MESFET) at high-temperature. Several groups have reported on GaN electronic devices. Furthermore, they have very low on-resistance during operation compared with Si devices. III-V nitrides, SiC and diamond, are very promising materials for electronic devices that can operate under high-temperature, high-power, and high-frequency conditions, since these materials have a high melting point, a wide bandgap, a high breakdown electric field, and a high saturation velocity. It was also confirmed by using Si-ion implantation that the contact resistivity of the GaN surface and electrode materials could be lowered to 7×10 −6 ohmcm 2. No degradation of the metal-semiconductor interface was observed by secondary ion-mass spectrometry (SIMS) and transmission electron microscopy (TEM). ![]() The BJT performance did not change at 573 K. The aging performance of the BJT at 573 K was examined during continuous current injection at 573 K for over 850 h. We confirmed that the FET performance did not change at 673 K for over 1010 h. That is, the lifetime of the FET at 673 K was examined by continuous current injection at 673 K. The high-temperature reliability of the GaN MESFET was also investigated. A GaN metal semiconductor field-effect transistor (MESFET) and an n-p-n GaN bipolar junction transistor (BJT) were fabricated for high-temperature operation. The mobility of undoped GaN was 350 cm 2/Vsec and the carrier concentration was 6×10 16 cm −3 at room temperature. High-quality GaN was grown using gas-source molecular-beam epitaxy (GSMBE). ![]()
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